DocumentCode
913468
Title
Accurate Current Calculation in Two-Dimensional MOSFET Models
Author
Wilson, Charles L. ; Blue, James L.
Author_Institution
Semiconductor Devices amd Circuits Division, Center for Electronics and Electrical Engineering, National Bureau of Standards, Washington, DC, USA
Volume
4
Issue
4
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
504
Lastpage
512
Abstract
Two-dimensional simulations of MOSFET´s are widely used for the design of short-channel transistors used in VLSI circuits. These models use low order methods of discretization of solution variables. In this paper, a method of current calculation is presented which works with these methods and yields good accuracy. The method uses integration of the solution variables, rather than differentiation, and is similar to applying Ohm´s law in two dimensions.
Keywords
Circuit simulation; Couplings; Differential equations; Finite element methods; Large scale integration; MOSFET circuits; Nonlinear equations; Poisson equations; Statistics; Very large scale integration;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1985.1270149
Filename
1270149
Link To Document