DocumentCode :
913500
Title :
Invasiveness of LiTaO3 and GaAs probes in external E-O sampling
Author :
Wu, Xiaohua ; Conn, David ; Song, Jian ; Nickerson, Kent
Author_Institution :
Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
Volume :
11
Issue :
3
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
448
Lastpage :
454
Abstract :
Disturbances of signals on a coplanar waveguide (CPW) induced by the presence of LiTaO3 and GaAs electrooptic probes in external electrooptic (EO) sampling have been simulated and compared quantitatively. The finite-difference-time-domain method is used to simulate the full wave field around a coplanar waveguide on a GaAs substrate in an external EO sampling configuration. The results indicate that the induced signal disturbance, or invasiveness, of a LiTaO3 probe is almost ten times that of a GaAs probe in terms of the magnitude of S11, but that LiTaO3 yields about two times the EO response for a given S11 and optical probing wavelength. The transparency of LiTaO3 to shorter wavelengths, however, allows an even higher sensitivity for this material relative to GaAs. The results suggest that these probes do not exhibit significant invasiveness (magnitude of S11 smaller than -40 dB), if they are removed from contact by the distance of CPWs center conductor width.
Keywords :
III-V semiconductors; electric field measurement; electro-optical devices; gallium arsenide; lithium compounds; optical waveguides; GaAs probes; GaAs substrate; LiTaO3; coplanar waveguide; electric field measurement; finite-difference-time-domain method; optical probing wavelength; Conducting materials; Coplanar waveguides; Electrooptical waveguides; Finite difference methods; Gallium arsenide; Optical sensors; Optical waveguides; Probes; Sampling methods; Time factors;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.219579
Filename :
219579
Link To Document :
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