• DocumentCode
    913505
  • Title

    Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices

  • Author

    Lavine, James P. ; Chang, Win-Chyi ; Anagnostopoulos, Constantine N. ; Burkey, Bruce C. ; Nelson, Edward T.

  • Author_Institution
    Research Laboratories, Eastman Kodak Company, Rochester, NY, USA
  • Volume
    4
  • Issue
    4
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    531
  • Lastpage
    535
  • Abstract
    The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.
  • Keywords
    Alpha particles; Bipolar transistors; Boundary conditions; Crosstalk; Monte Carlo methods; Optical imaging; Semiconductor memory; Silicon; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1985.1270153
  • Filename
    1270153