DocumentCode
913505
Title
Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices
Author
Lavine, James P. ; Chang, Win-Chyi ; Anagnostopoulos, Constantine N. ; Burkey, Bruce C. ; Nelson, Edward T.
Author_Institution
Research Laboratories, Eastman Kodak Company, Rochester, NY, USA
Volume
4
Issue
4
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
531
Lastpage
535
Abstract
The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.
Keywords
Alpha particles; Bipolar transistors; Boundary conditions; Crosstalk; Monte Carlo methods; Optical imaging; Semiconductor memory; Silicon; Solid state circuits; Testing;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1985.1270153
Filename
1270153
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