Title :
First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections
Author :
Oberg, Dennis L. ; Wert, Jerry L.
Author_Institution :
Boeing Aerospace Company Seattle, WA 98124-2499
Abstract :
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed.
Keywords :
Circuit testing; Current limiters; Laboratories; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power measurement; Pulse circuits; Resistors; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337546
