DocumentCode :
913549
Title :
Wafer Mapping of Total Dose Failure Thresholds in a Bipolar Recessed Field Oxide Technology
Author :
Titus, Jeffrey L. ; Platteter, Dale G.
Author_Institution :
Naval Weapons Support Center Code 60541, Building 2087 Crane, Indiana 47522 (812) 854-1808
Volume :
34
Issue :
6
fYear :
1987
Firstpage :
1751
Lastpage :
1756
Abstract :
Ionizing radiation failure thresholds were measured across a silicon wafer using 10 KeY x-rays to determine the success of hardened process modifications and to examine wafer level hardness assurance screening techniques. Topological wafer maps of the total dose failure response for Signetics 74F00 circuits are presented.
Keywords :
Circuits; Failure analysis; Ionizing radiation; Packaging; Radiation hardening; Sampling methods; Silicon; Very large scale integration; Wafer scale integration; X-rays;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1987.4337549
Filename :
4337549
Link To Document :
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