Title :
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET´s
Author :
Park, Hong-June ; Kim, Choong-Ki
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
fDate :
10/1/1985 12:00:00 AM
Abstract :
A new empirical model for the threshold voltage of enhancement NMOSFET is proposed based on experimental observations. This model covers both short and narrow channel effects. The model equation is formulated by the superposition of these two effects, and extraction of model parameters is presented. Comparison of the model with experimentally measured values shows good agreement for transistors with effective channel length down to 1.8 μm and effective channel width down to 1.0 μm.
Keywords :
Channel bank filters; Circuit simulation; Doping; Electrodes; Equations; Length measurement; MOSFET circuits; SPICE; Substrates; Threshold voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1985.1270163
