DocumentCode :
913621
Title :
SEU Sensitivity of Power Converters with MOSFETs in Space
Author :
Brucker, G.J. ; Measel, P. ; Oberg, D. ; Wert, J. ; Criswell, T.
Author_Institution :
RCA/GE Astro-Space Division P.O. Box 800 Princeton, N.J. 08543-0800
Volume :
34
Issue :
6
fYear :
1987
Firstpage :
1792
Lastpage :
1795
Abstract :
This paper presents the results of an investigation into the survivability of power MOSFETs in space. Seventy-two of these devices are presently in geosynchronous orbit on board six communications spacecraft, and operating at 70V which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles with a LET of 10 MeV-cm2/mg, and an iron spectrum with a maximum LET of 26 showed these Hi-Rel ("S") flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.
Keywords :
Aerospace electronics; Assembly; Breakdown voltage; Circuits; Iron; MOSFETs; Power supplies; Prototypes; Space vehicles; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1987.4337556
Filename :
4337556
Link To Document :
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