Title :
Two-dimensional analysis of lateral-base transistors
Author :
Kilpatrick, J.A. ; Ryan, W.D.
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
Numerical methods are used to show that when p-n-p lateral-base transistors are analysed, the emitter efficiency must be considered. A comparison is made between two such transistors, one with a buried n layer, and the other without.
Keywords :
bipolar transistors; bipolar transistors; lateral base transistors; p-n-p; two dimensional analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710153
