• DocumentCode
    913647
  • Title

    Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16K Static RAM

  • Author

    Smith, L.S. ; Nichols, D.K. ; Coss, J.R. ; Price, W.E. ; Binder, D.

  • Author_Institution
    Jet Propulsion Laboratory California Institute of Technology 4800 Oak Grove Drive Pasadena, California 91109
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1800
  • Lastpage
    1802
  • Abstract
    Data have been obtained with krypton and xenon ions for the latchup threshold vs. temperature of four different versions of a Harris CMOS/epi 16K static RAM. These special versions of the HM6516 RAM have 12-micron, 9-micron, 7-micron and 5-micron epi thicknesses, as grown. The test data showed a marked improvement in latchup resistance with decreasing epi thickness and with decreasing temperature over the range of 25°C (operating chip ambient) to 100°C.
  • Keywords
    Cyclotrons; Infrared heating; Pollution measurement; Temperature control; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Testing; Xenon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337558
  • Filename
    4337558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913647