• DocumentCode
    913665
  • Title

    Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

  • Author

    O´Loughlin, Michael J.

  • Author_Institution
    The Aerospace Corporation Electronics Research Laboratory P.O. Box 92957 Los Angeles, CA 90009-2957
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1808
  • Lastpage
    1811
  • Abstract
    AlGaAs/GaAs high electron mobility transistors (HEMTs) have been exposed to 90 Mrad(GaAs) of Co60 gamma radiation. Despite the heavy exposure, the peak transconductance for selected transistors was only diminished by approximately 4%. In addition, threshold voltage shifts of up to 80 mV were observed for both enhancement and depletion mode devices.
  • Keywords
    Gallium arsenide; Gamma rays; HEMTs; MODFET circuits; Metallization; Probes; Radiation effects; Temperature; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337560
  • Filename
    4337560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913665