Title :
Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation
Author :
O´Loughlin, Michael J.
Author_Institution :
The Aerospace Corporation Electronics Research Laboratory P.O. Box 92957 Los Angeles, CA 90009-2957
Abstract :
AlGaAs/GaAs high electron mobility transistors (HEMTs) have been exposed to 90 Mrad(GaAs) of Co60 gamma radiation. Despite the heavy exposure, the peak transconductance for selected transistors was only diminished by approximately 4%. In addition, threshold voltage shifts of up to 80 mV were observed for both enhancement and depletion mode devices.
Keywords :
Gallium arsenide; Gamma rays; HEMTs; MODFET circuits; Metallization; Probes; Radiation effects; Temperature; Threshold voltage; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337560
