Title :
Simulation of MOS Circuits by Decision Diagrams
Author :
Cerny, Eduard ; Gecsei, Jan
Author_Institution :
Departement d´´Informatique et de Recherche operationnelle (I.R.O.), University of Montreal, Montreal, Que., Canada
fDate :
10/1/1985 12:00:00 AM
Abstract :
This paper describes a novel approach to switch-level simulation of MOS circuits. The circuit is first partitioned into connector-switch networks CSN [4]. Then each CSN is represented in terms of a decision diagram DD, which is particularly suitable for use in simulators. The advantages of DD´s are that they are based on a solid theory and they permit fast evaluation of the network´s response to any input vector. The CSN´s are coupled through a 3-state automaton representing charge wells associated with transistor gates.
Keywords :
Attenuators; Automata; Circuit simulation; Logic design; MOSFETs; SPICE; Solids; Switches; Switching circuits; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1985.1270168