DocumentCode
913672
Title
Simulation of MOS Circuits by Decision Diagrams
Author
Cerny, Eduard ; Gecsei, Jan
Author_Institution
Departement d´´Informatique et de Recherche operationnelle (I.R.O.), University of Montreal, Montreal, Que., Canada
Volume
4
Issue
4
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
685
Lastpage
693
Abstract
This paper describes a novel approach to switch-level simulation of MOS circuits. The circuit is first partitioned into connector-switch networks CSN [4]. Then each CSN is represented in terms of a decision diagram DD, which is particularly suitable for use in simulators. The advantages of DD´s are that they are based on a solid theory and they permit fast evaluation of the network´s response to any input vector. The CSN´s are coupled through a 3-state automaton representing charge wells associated with transistor gates.
Keywords
Attenuators; Automata; Circuit simulation; Logic design; MOSFETs; SPICE; Solids; Switches; Switching circuits; Very large scale integration;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1985.1270168
Filename
1270168
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