DocumentCode :
913683
Title :
X-band silicon TRAPATT diodes
Author :
Ying, R.S.
Volume :
58
Issue :
8
fYear :
1970
Firstpage :
1285
Lastpage :
1286
Abstract :
Pulsed TRAPATT diodes have been successfully operated in X-band with 20 percent efficiency and 15 W output power. The diodes operate at the first subharmonic of the IMPATT frequency. Similar diodes have yielded 35 percent efficiency at 5.3 GHz as oscillators, and 54 percent efficiency at 3 GHz as RF triggered amplifiers.
Keywords :
Circuit testing; Coaxial components; Diodes; Doping profiles; Heat sinks; Oscillators; Power generation; Radio frequency; Silicon; Solid state circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7907
Filename :
1449837
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=913683
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