High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier

Author

Asonen, H. ; Näppi, J. ; Ovtchinnikov, A. ; Savolainen, P. ; Zhang, G. ; Ries, R. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

589

Lastpage

591

Abstract

The authors discuss the fabrication and characteristics of high-power (P/sub CW/=430 mW) InGaAs/InGaAsP/InGaP ridge waveguide lasers emitting at lambda =0.98 mu m, which is the optimum wavelength for pumping erbium-doped fiber amplifiers. In the past, high-power operation of Al-free pump lasers has been limited to 150 mW because of catastrophic optical damage of the mirror facet. This problem has been largely removed by increasing the spot size of the laser with the aid of an improved waveguide design. As a result, Al-free lasers can now achieve a maximum power comparable to the conventional GaAlAs-based pump lasers for lambda =0.98 mu m.<>

Keywords

III-V semiconductors; erbium; fibre lasers; gallium arsenide; indium compounds; laser beams; optical pumping; optical waveguides; optical workshop techniques; semiconductor lasers; 0.98 micron; 430 mW; Al-free pump lasers; InGaAs-InGaAsP-InGaP; SiO/sub 2/:Er; characteristics; fabrication; high-power lasers; mirror facet; optical damage; pumping; semiconductors; spot size; waveguide design; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Indium gallium arsenide; Laser excitation; Optical device fabrication; Optical waveguides; Power lasers; Pump lasers; Stimulated emission; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219677

Filename

219677