• DocumentCode
    913723
  • Title

    Analytical model for p--n junctions under high-injection conditions

  • Author

    Cornu, J.

  • Author_Institution
    Brown Boveri Research Centre, Baden, Switzerland
  • Volume
    7
  • Issue
    18
  • fYear
    1971
  • Firstpage
    509
  • Lastpage
    510
  • Abstract
    An analytical approximation for space-charge layers at abrupt p--n junctions under high-injection conditions is presented. In this approximation, an exponential decay of the charge on both sides of the junction is assumed. Predictions from this model are found to be in good agreement with the results of exact numerical solutions.
  • Keywords
    p-n junctions; semiconductor device models; space charge; p n junctions; reverse bias conditions; semiconductor device models; space charge; thyristor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710344
  • Filename
    4235244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913723