Title :
1.0-mA-threshold uncoated lasers by impurity-induced disordering
Author :
Zou, W.X. ; Bowen, T. ; Law, K.-K. ; Young, D.B. ; Merz, J.L.
Author_Institution :
AMP Inc., Harrisburg, PA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low as 1.0 mA under room-temperature continuous-wave operation was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the quantum well (QW) design and the device structures.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical workshop techniques; semiconductor lasers; 1 mA; 298 K; InGaAs-GaAs-AlGaAs; device structures; double-quantum-well material; fabrication; impurity-induced disordering; low-threshold lasers; optimizations; quantum well design; room-temperature continuous-wave operation; semiconductors; uncoated lasers; Gallium arsenide; Gas lasers; Indium gallium arsenide; Molecular beam epitaxial growth; Optical interconnections; Power lasers; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
