DocumentCode
913727
Title
1.0-mA-threshold uncoated lasers by impurity-induced disordering
Author
Zou, W.X. ; Bowen, T. ; Law, K.-K. ; Young, D.B. ; Merz, J.L.
Author_Institution
AMP Inc., Harrisburg, PA, USA
Volume
5
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
591
Lastpage
594
Abstract
Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low as 1.0 mA under room-temperature continuous-wave operation was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the quantum well (QW) design and the device structures.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical workshop techniques; semiconductor lasers; 1 mA; 298 K; InGaAs-GaAs-AlGaAs; device structures; double-quantum-well material; fabrication; impurity-induced disordering; low-threshold lasers; optimizations; quantum well design; room-temperature continuous-wave operation; semiconductors; uncoated lasers; Gallium arsenide; Gas lasers; Indium gallium arsenide; Molecular beam epitaxial growth; Optical interconnections; Power lasers; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.219678
Filename
219678
Link To Document