DocumentCode
913753
Title
A novel TRAPATT oscillator design
Author
Evans, W.J. ; Seidel, Thomas E. ; Scharfetter, D.L.
Volume
58
Issue
8
fYear
1970
Firstpage
1294
Lastpage
1295
Abstract
A new type of silicon TRAPATT diode has been fabricated and tested. The diode has been designed to operate as a continuous-wave TRAPATT diode in the 4- to 6-GHz range. The diode structure is novel in that it employs an asymmetric double-sided design in which one side is optimized for TRAPATT operation and the other side is optimized for the generation of the 50-GHz IMPATT oscillations required for starting the TRAPATT oscillator. The diode was fabricated using ion-implantation techniques.
Keywords
Breakdown voltage; Design optimization; Frequency; Germanium; Low pass filters; Oscillators; P-i-n diodes; Pulse circuits; Silicon; Voltage control;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7914
Filename
1449844
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