Title :
A novel TRAPATT oscillator design
Author :
Evans, W.J. ; Seidel, Thomas E. ; Scharfetter, D.L.
Abstract :
A new type of silicon TRAPATT diode has been fabricated and tested. The diode has been designed to operate as a continuous-wave TRAPATT diode in the 4- to 6-GHz range. The diode structure is novel in that it employs an asymmetric double-sided design in which one side is optimized for TRAPATT operation and the other side is optimized for the generation of the 50-GHz IMPATT oscillations required for starting the TRAPATT oscillator. The diode was fabricated using ion-implantation techniques.
Keywords :
Breakdown voltage; Design optimization; Frequency; Germanium; Low pass filters; Oscillators; P-i-n diodes; Pulse circuits; Silicon; Voltage control;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7914
