Title :
High-power, strained-layer amplifiers and lasers with tapered gain regions
Author :
Kintzer, E.S. ; Walpole, J.N. ; Chinn, S.R. ; Wang, C.A. ; Missaggia, L.J.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
Laterally tapered gain regions designed to accommodate the diffraction of narrow single-lobe beams that have been used in both optical amplifiers and lasers are described. Amplifier output power of 3.5 W with 3.1 W in a 1.05 times diffraction-limited lobe and laser output power of over 4 W with approximately half the power in a 1.7 times diffraction-limited lobe have been achieved.<>
Keywords :
optical waveguides; semiconductor lasers; 3.1 W; 3.5 W; 4 W; diffraction; high-power amplifiers; lasers; output power; semiconductor devices; single-lobe beams; strained-layer amplifiers; tapered gain regions; waveguides; High power amplifiers; Laser beams; Optical amplifiers; Optical design; Optical diffraction; Power amplifiers; Power generation; Power lasers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
