Wavelength tuning mechanism in three-electrode DFB lasers

Author

Tohyama, Masaki ; Onomura, Masaaki ; Funemizu, Masahisa ; Suzuki, Nobuo

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

616

Lastpage

618

Abstract

The wavelength tuning mechanism is investigated for three-electrode distributed feedback (DFB) InGaAs-InGaAsP lasers. It is shown that the side and center sections play different roles in wavelength tuning: the former determines the effective Bragg wavelength and the latter contributes through the round-trip phase condition. The lasing wavelength is expressed in a simple form that renders the wavelength shift behavior exceedingly understandable. The indispensability of the thermal contribution to continuous broad range tuning is also clarified both theoretically and experimentally.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser tuning; semiconductor lasers; InGaAs-InGaAsP; continuous broad range tuning; distributed feedback lasers; effective Bragg wavelength; lasing wavelength; round-trip phase condition; semiconductor; thermal contribution; three-electrode DFB lasers; wavelength shift behavior; wavelength tuning; wavelength tuning mechanism; Charge carrier density; Electrodes; Equations; Indium gallium arsenide; Laser modes; Laser theory; Laser tuning; Optical tuning; Plasma temperature; Refractive index;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219687

Filename

219687