Title :
Narrow linewidth characteristic of a 1.5 mu m wavelength single-mode phase-locked laser array
Author :
Dong, Jie ; Arai, Shigehisa ; Kudo, Koji ; Hotta, Masatsugu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
The linewidth of a 1.5- mu m wavelength single-mode phase-locked laser array was measured. A relatively narrow linewidth of 203 kHz was obtained at an output power of 25 mW for a five-element phase-locked laser array that consists of a five-pair Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP compressively strained quantum-well active region and a mode controlling grating filter. This result indicates the reduced spontaneous emission factor due to a larger cavity size in the lateral direction.<>
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser mode locking; semiconductor laser arrays; 1.5 micron; 203 kHz; 25 mW; Ga/sub 0.3/In/sub 0.7/As-GaInAsP-InP; cavity size; compressively strained quantum-well active region; linewidth; mode controlling grating filter; semiconductor; single-mode phase-locked laser array; spontaneous emission factor; Indium phosphide; Laser modes; Optical arrays; Phase measurement; Phased arrays; Power generation; Power lasers; Quantum well lasers; Strain control; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
