AlGaInP visible resonant cavity light-emitting diodes

Author

Lott, J.A. ; Schneider, R.P., Jr. ; Zolper, J.C. ; Malloy, K.J.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

631

Lastpage

633

Abstract

Visible (670-nm) resonant cavity light-emitting diodes (RCLEDs) composed entirely of AlGaInP alloys are discussed. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBRs). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays.<>

Keywords

aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical workshop techniques; 300 K; 4.8 nm; 670 nm; AlGaInP alloys; distributed Bragg reflectors; emission linewidth; monochromatic displays; partial reflector; plastic fiber communication systems; strained quantum well optical cavity active region; visible resonant cavity light-emitting diodes; Displays; Distributed Bragg reflectors; Light emitting diodes; Optical devices; Optical fiber communication; Optical fiber devices; Plastics; Reflectivity; Resonance; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219692

Filename

219692