DocumentCode :
913877
Title :
Measurement of the velocity/field characteristic of GaAs sample in dipole-mode operation
Author :
Pokorny, J. ; Jel¿¿nek, F.
Author_Institution :
Czechoslovak Academy of Sciences, Institue of Radio Engineering & Electronics, Praha, Czechoslovakia
Volume :
7
Issue :
18
fYear :
1971
Firstpage :
528
Lastpage :
529
Abstract :
A new technique of determination of the velocity/field characteristic of GaAs sample while a domain is in transit is proposed. The v(E) characteristic above threshold is approximated to by a convenient analytical expression containing unknown coefficients that are calculated by a computer using the measured current/voltage characteristic or capacitive probe measurements.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; semiconductor materials; GaAs; capacitive probe measurements; current/voltage characteristics; electron diffusion; electron mobility; semiconductor materials; velocity/field characteristic;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710358
Filename :
4235258
Link To Document :
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