Title :
High-gain transistor frequency multipliers
Author :
O´Clock, G.D., Jr. ; Dauphinee, R.J.
Abstract :
Certain transistors, operating class C, have the combined properties of power amplifier and frequency multiplier. Utilizing these transistors, power gains in excess of 10 dB can be obtained for ×4 and ×5 narrow-band UHF transistor frequency multipliers.
Keywords :
Charge carrier density; Charge carrier processes; Current density; Damping; Electron mobility; Frequency; Friction; Nonlinear equations; Power transmission lines; Semiconductor device doping;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7930
