Title :
The optical second-harmonic generation from porous silicon
Author :
Lo, Kuang-Yao ; Lue, Juh Tzeng
Author_Institution :
Nat. Tsing Hua Univ., Hsin Chu, Taiwan
fDate :
6/1/1993 12:00:00 AM
Abstract :
Second-harmonic generation from porous silicon with a magnitude of two orders greater than that from the original silicon crystalline wafers is discussed. The measured effective second-order nonlinear susceptibility X/sup (2)//sub ps.eff/ for a p-type porous silicon is 1.96*10/sup -7/ esu. The susceptibility is estimated on the base of a bulk property rather than on quantum confinement owing to its large surface to volume ratio.<>
Keywords :
elemental semiconductors; nonlinear optical susceptibility; optical harmonic generation; porous materials; silicon; Si; effective second-order nonlinear susceptibility; optical second-harmonic generation; p-Si; semiconductor; Bonding; Chemicals; Crystallization; Dielectric constant; Nonlinear optics; Optical harmonic generation; Optical sensors; Optical surface waves; Probes; Silicon;
Journal_Title :
Photonics Technology Letters, IEEE
