Title :
Millimeter IMPATT Sources for the 130-170-GHz Range
Author :
Weller, Kenneth P. ; Ying, Robert S. ; Lee, Don H.
fDate :
11/1/1976 12:00:00 AM
Abstract :
Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.
Keywords :
Aerospace electronics; Copper; Current density; Doping profiles; Fabrication; Light emitting diodes; Millimeter wave devices; Silicon; Substrates; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128954
