High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

Author

Watanabe, I. ; Sugou, S. ; Ishikawa, H. ; Anan, T. ; Makita, K. ; Tsuji, M. ; Taguchi, K.

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

675

Lastpage

677

Abstract

High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120-GHz gain-bandwidth product. These photodiodes exhibit a maximum bandwidth of 15 GHz, 0.34- mu A dark current at a multiplication factor of 20, a capacitance of 0.17 pF, 65% quantum efficiency, and a low breakdown voltage of about 20 V. A clear eye opening at a multiplication factor of 20 was obtained for 10-Gbs nonreturn to zero signals. This indicates that these devices have potential for high-speed, high-sensitivity and low-power-consumption, long-wavelength optical receivers.<>

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; sensitivity; 0.17 pF; 0.34 muA; 10 Gbit/s; 15 GHz; 20 V; 65 percent; InAlAs-InAlGaAs; MBE; dark current; flip-chip; gain-bandwidth product; gas-source molecular beam epitaxy; high-sensitivity; high-speed; high-speed avalanche photodiodes; long-wavelength optical receivers; low breakdown voltage; low-dark-current; low-power-consumption; maximum bandwidth; multiplication factor; quantum efficiency; quaternary well superlattice APDs; semiconductor growth; semiconductor superlattices; semiconductors; Avalanche photodiodes; Bandwidth; Dark current; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Optical buffering; Optical receivers; Photoconductivity; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219707

Filename

219707