Title :
The inversion channel resonant-cavity enhanced photodetector for two-dimensional optoelectronic array applications
Author :
Daryanani, S.L. ; Taylor, G.W. ; Sargood, S.K. ; Vang, T. ; Tell, B.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The operation of the inversion-channel resonant-cavity enhanced (RCE) photodetector in a configuration compatible with the vertical-cavity surface-emitting laser (VCSEL) is discussed. The phototransistor uses three strained InGaAs/GaAs quantum wells as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was obtained at the resonant wavelength of 0.94 mu m, thereby giving a resonant-enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A/cm/sup 2/ allowed the phototransistor responsivity to reach 2.1 A/W at the resonant wavelength.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical resonators; photodetectors; phototransistors; 0.94 micron; 2D; 41 percent; FEIC; IR; InGaAs-GaAs; SQW; VCSEL; absorbing region; bipolar transistor gain; current density; field effect integrated circuits; inversion channel; optoelectronic array applications; phototransistor; phototransistor responsivity; post-growth dielectric top stack; quantum efficiency; resonant wavelength; resonant-cavity enhanced photodetector; resonant-enhancement factor; semiconductors; strained quantum wells; vertical-cavity surface-emitting laser; Bipolar transistors; Dielectrics; Gallium arsenide; Indium gallium arsenide; Photodetectors; Phototransistors; Quantum well lasers; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
