A Composite Two-Dimensional Process/Device Simulation System (TOPMODE) and its Application for Total Process Designing in Submicron VLSI MOS Device Phase

Author

Onga, Shinji ; Konaka, Masami ; Ohmichi, Akemi ; Kanaka, K. ; Dang, Ryo

Author_Institution

Toshiba Research and Development Center, Toshiba Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan

Volume

5

Issue

3

fYear

1986

fDate

7/1/1986 12:00:00 AM

Firstpage

365

Lastpage

370

Abstract

A new composite two-dimensional process/two-dimensional device simulation system (TOPMODE) (FOOTNOTE: Standing for TOshiba Simulation Program for MOS DEvice.) has been developed to provide a straightforward means of predicting small-geometry device characteristics using the fabrication process sequence. Using TOP-MODE, an analysis of the anomalous subthreshold drain current peculiar to buried oxide isolation (BOX) structure device has been conducted and the physical mechanism is attributed to the impurity profile and other geometry effects. Input to TOPMODE is specially designed using key words language as a user-oriented CAD tool. Plotting functions for multidimensional perspective drawing of output results have also been installed to provide a better visual aid.

Keywords

Design automation; Fabrication; Geometry; Impurities; MOS devices; Multidimensional systems; Predictive models; Process design; Subthreshold current; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.1986.1270205

Filename

1270205