Title :
Optoelectronic exclusive-OR (XOR) gate
Author :
Beyette, F.R., Jr. ; Geib, K.M. ; Feld, S.A. ; Hafich, M.J. ; An, X. ; Robinson, G.Y. ; Wilmsen, C.W.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
An optoelectronic circuit that implements the exclusive-OR (XOR) logic function is described. The circuit uses two unmatched heterojunction phototransistors and a light amplifying optical switch (LAOS) monolithically integrated on an InGaAs/InP wafer grown by gas-source molecular beam epitaxy. The circuit was operated from DC up to the limit of the probe stand (90 kHz). The ease of operation and high ON/OFF contrast ratio (>50) make this XOR gate ideal for applications that require optical binary comparison or addition.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical logic; optical switches; phototransistors; semiconductor switches; 90 kHz; DC; MBE semiconductor wafer growth; XOR; XOR gate; exclusive-OR; gas-source molecular beam epitaxy; high ON/OFF contrast ratio; light amplifying optical switch; logic function; monolithically integrated; optical adders; optical binary comparison; optical logic gates; optoelectronic circuit; probe stand; unmatched heterojunction phototransistors; Circuits; Electron optics; Gallium arsenide; Heterojunctions; Optical arrays; Optical filters; Optical receivers; Optical signal processing; Schottky diodes; Semiconductor diodes;
Journal_Title :
Photonics Technology Letters, IEEE
