DocumentCode :
914078
Title :
Radiation effect on MOS/LSI
Author :
Wei-Hau Wu
Volume :
58
Issue :
9
fYear :
1970
Firstpage :
1382
Lastpage :
1383
Abstract :
The performance of Fairchild 3530 metal-oxide semiconductor/large-scale integration (MOS/LSI) integrated circuits was studied in a Co-60 radiation environment. The experimental results obtained indicate that the maximum gamma dose for this device is 5.6×104rad. These data can serve as a reference for using MOS/LSI in military or space system applications.
Keywords :
Apertures; Attenuators; Boring; Gain measurement; Large scale integration; Laser beams; Monitoring; Near-field radiation pattern; Oscillators; Radiation effects;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7946
Filename :
1449876
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=914078
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