DocumentCode
914091
Title
Absence of 1/f noise in m.o.s. transistors operated in saturation
Author
Leuenberger, F.
Author_Institution
Centre Ã\x89lectronique Horloger SA, Neuchâtel, Switzerland
Volume
7
Issue
18
fYear
1971
Firstpage
561
Abstract
Noise measurements on p channel m.o.s.f.e.t.s in the 15 Hz¿50 kHz range revealed the absence of a 1/f term in the noise spectrum which may be described by the expression Req(¿) = A + B ¿/1+(¿¿)2 where A, B and ¿ are constants. Using charge-pumping measurements, the effective density of recombination centres was found to be 2.5 × 109 cm¿2 (eV)¿1.
Keywords
field effect transistors; metal-insulator-semiconductor devices; noise measurement; 15 Hz to 50 kHz 1/f noise; MOSFET; noise spectrum; planar bipolar silicon transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710378
Filename
4235278
Link To Document