Demonstration of a waveguide lens monolithically integrated with a laser diode by compositional disordering of a quantum well

Author

Hirata, T. ; Suehiro, M. ; Hihara, M. ; Dobashi, M. ; Hosomatsu, H.

Author_Institution

Yokogawa Electr. Corp., Tokyo, Japan

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

698

Lastpage

700

Abstract

An elliptic waveguide lens that is monolithically integrated with a GaAs/AlGaAs distributed feedback laser diode and a grating output coupler by electron beam lithography, ion implantation, and two-step metalorganic vapor phase epitaxy is described. The waveguide lens is formed by the etching of a patterning layer to ensure that the fabrication process of the waveguide lens is compatible with that of the laser diode. Collimated output light is directly obtained from a semiconductor substrate using this waveguide lens and a grating output coupler.<>

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; integrated optics; lenses; optical couplers; optical waveguides; semiconductor lasers; DFB semiconductor laser; GaAs-AlGaAs; VPE semiconductor growth; collimated output light; compositional disordering; distributed feedback laser; electron beam lithography; etching; fabrication process; grating output coupler; ion implantation; laser diode; monolithically integrated; patterning layer; quantum well; semiconductor substrate; two-step metalorganic vapor phase epitaxy; waveguide lens; Diode lasers; Distributed feedback devices; Electron beams; Gallium arsenide; Gratings; Ion implantation; Lenses; Lithography; Optical coupling; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219715

Filename

219715