• DocumentCode
    914163
  • Title

    Erratum: Three-level transferred-electron effects in InP

  • Author

    Rees, H.D. ; Hilsum, C.

  • Volume
    7
  • Issue
    18
  • fYear
    1971
  • Firstpage
    568
  • Keywords
    band structure; electron mobility; indium compounds; semiconductor materials; InP; band structure; electron mobility; limiting oscillator efficiency; semiconductor material; three level transferred electron effects; velocity/field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710383
  • Filename
    4235283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=914163