Title :
Delay time in GaAs high-power high-speed photoconductive switching devices
Author :
Zu, L.Q. ; Lu, Y. ; Shen, H. ; Dutta, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is discussed. The field- and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field, and laser-energy-dependent delay time. Calculations are shown to agree with the experimental results.<>
Keywords :
III-V semiconductors; gallium arsenide; optical switches; photoconducting devices; semiconductor switches; GaAs; delay time; field dependence; high-power; high-speed; laser-energy-dependent; open-state-field; optical absorption coefficient; optical illumination; photoconductive switching devices; semi-insulating; transient response; Absorption; Delay effects; Electron traps; Gallium arsenide; Laser modes; Laser radar; Laser theory; Photoconducting devices; Photoconductivity; Power semiconductor switches;
Journal_Title :
Photonics Technology Letters, IEEE
