Title :
A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer
Author :
Greenberg, David R. ; del Alamo, Jesús A. ; Bhat, Rajaram
Author_Institution :
MIT, Cambridge, MA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
The authors have exploited both the attractive transport properties and the etch selectivity of InP in a novel InAlAs/n/sup +/-InP metal-insulator-doped-channel heterostructure FET (MIDFET). In several other material systems, the MIDFET has been shown to be well-suited to high-power telecommunications applications. The device employs InP both as the channel layer and as an etch-stop layer in a selective-etch recessed-gate process. L/sub g/=1.8- mu m devices achieve g/sub m/ and I/sub D,max/ values of 224 mS/mm and 408 mA/mm, respectively, the highest recorded values for an InP channel HFET with L/sub g/>or=0.8- mu m, including MODFETs. These figures combine with a breakdown voltage of 10 V and peak values of f/sub T/ and f/sub max/ of 10.5 and 28 GHz, respectively. The selective-etch recessed-gate process contributes to excellent device performance while maintaining a tight 60-mV threshold voltage distribution (13 mV between adjacent devices).<>
Keywords :
III-V semiconductors; aluminium compounds; etching; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 1.8 micron; 10 V; 10.5 GHz; 224 mS; 28 GHz; InAlAs-InP; InP etch-stop layer; MIDFET; breakdown voltage; cutoff frequency; etch selectivity; maximum frequency of oscillation; metal-insulator-doped-channel heterostructure FET; recessed gate HFET; selective-etch recessed-gate process; threshold voltage distribution; transconductance; transport properties; FETs; Fabrication; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Student members; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
