Title :
High-field-current instabilities in InP
Author_Institution :
Royal Radar Establishment, Malvern, UK
Abstract :
Results are reported of computer simulations and further experiments which are related to earlier observations. They are in agreement with the 3-level-transfer theory, and allow domain-mode oscillations under special conditions.
Keywords :
computer applications; domains; indium compounds; microwave oscillators; semiconductor materials; simulation; 3 level transfer theory; InP; computer simulations; domain mode oscillations; high field current instabilities; microwave oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710394
