Subnanosecond gating properties of the dynamic cross-field photomultiplier

Experimentally measured characteristics of the sampling function in the dynamic cross-field photomultiplier are presented. A self-mode-locked He-Ne laser with a pulse-repetition rate nearly equal to the photomultiplier sampling rate is used to determine the sampling characteristics of this device. Experiments with a device with two regions in which different dc fields can be established are also reported. With this device, sampling intervals of less than 10 percent of the RF electric field period can be obtained with very little reduction in gain compared to conditions yielding-broader sampling intervals.