DocumentCode
914424
Title
Microwave Power GaAs FET Amplifiers
Author
Tserng, Hua Quen ; Sokolov, Vladimir ; Macksey, H. Michael ; Wisseman, William R.
Volume
24
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
936
Lastpage
943
Abstract
The development of broad-band microwave amplifiers using state-of-the-art GaAs power FET´s covering the 6-12-GHz frequency band is presented. A unique circuit topology incorporating an edge-coupled transmission line section for both impedance matching and input/output dc blocking is described. The microstrip circuit design of an X-band 1-W 22-dB-gain GaAs FET amplifier is also discussed. Microwave performance characteristics such as intermodulation, AM-to-PM conversion, and noise figure are included.
Keywords
Circuit topology; Distributed parameter circuits; Frequency; Gallium arsenide; Impedance matching; Microstrip; Microwave FETs; Microwave amplifiers; Power amplifiers; Power transmission lines;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1129003
Filename
1129003
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