Title :
TRAPATT-amplifier and TRAPATT-oscillator diode structures
Author_Institution :
Sperry Rand Research Center, Sudbury, USA
Abstract :
Silicon avalanche-diode structures were fabricated which could function as TRAPATT amplifiers but not as TRAPATT oscillators. Diodes which can function as self-excited oscillators have a better high-frequency IMPATT-mode structure than do the exclusively amplifying devices.
Keywords :
IMPATT devices; avalanche diodes; microwave amplifiers; microwave oscillators; 1.5 to 3 GHz; IMPATT devices; L-band; S-band; avalanche diodes; microwave oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710411
