DocumentCode
914464
Title
Planar Schottky-gate Gunn devices
Author
Heime, Klaus
Author_Institution
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Volume
7
Issue
20
fYear
1971
Firstpage
610
Lastpage
613
Abstract
Gunn devices, with a Schottky diode as control electrode, were fabricated and investigated. The experimental results are compared with calculations, which are also outlined, and agreement between theory and experiment is found to be satisfactory. A jitter in domain nucleation is shown to be due to fluctuations in the anode voltage.
Keywords
Gunn devices; Schottky-barrier diodes; Gunn effect; Schottky diode; domain nucleation fluctuations; semiconductor devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710413
Filename
4235315
Link To Document