DocumentCode :
914464
Title :
Planar Schottky-gate Gunn devices
Author :
Heime, Klaus
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Volume :
7
Issue :
20
fYear :
1971
Firstpage :
610
Lastpage :
613
Abstract :
Gunn devices, with a Schottky diode as control electrode, were fabricated and investigated. The experimental results are compared with calculations, which are also outlined, and agreement between theory and experiment is found to be satisfactory. A jitter in domain nucleation is shown to be due to fluctuations in the anode voltage.
Keywords :
Gunn devices; Schottky-barrier diodes; Gunn effect; Schottky diode; domain nucleation fluctuations; semiconductor devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710413
Filename :
4235315
Link To Document :
بازگشت