DocumentCode
914492
Title
Cryogenically Cooled GaAs FET Amplifier with a Noise Temperature Under 70 K at 5.0 GHz (Short Papers)
Author
Pierro, John
Volume
24
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
972
Lastpage
975
Abstract
A 4.5-5.0-GHz gallium arsenide field-effect transistor (GaAs FET) amplifier cryogenically cooled to approximately 70 K is described. A noise temperature of under 70 K is achieved over the hand. Power gain for the two-stage amplifier is 20 dB. A noise analysis is performed to predict noise-temperature dependence on the temperature of the amplifier.
Keywords
Circuit noise; Extraterrestrial measurements; FETs; Gallium arsenide; Low-noise amplifiers; Noise figure; Performance analysis; Performance gain; Signal to noise ratio; Temperature dependence;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1129009
Filename
1129009
Link To Document