Title :
Cryogenically Cooled GaAs FET Amplifier with a Noise Temperature Under 70 K at 5.0 GHz (Short Papers)
fDate :
12/1/1976 12:00:00 AM
Abstract :
A 4.5-5.0-GHz gallium arsenide field-effect transistor (GaAs FET) amplifier cryogenically cooled to approximately 70 K is described. A noise temperature of under 70 K is achieved over the hand. Power gain for the two-stage amplifier is 20 dB. A noise analysis is performed to predict noise-temperature dependence on the temperature of the amplifier.
Keywords :
Circuit noise; Extraterrestrial measurements; FETs; Gallium arsenide; Low-noise amplifiers; Noise figure; Performance analysis; Performance gain; Signal to noise ratio; Temperature dependence;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1129009
