DocumentCode
914505
Title
A Quasi-Linear Approach to the Design of Microwave Transistor Power Amplifiers (Short Papers)
Author
Kotzebue, K.L.
Volume
24
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
975
Lastpage
978
Abstract
A method of large-signal transistor characterization and power amplifier design is described which allows the designer to predict the load and source terminations required for optimum added-power circuit efficiency, and to see graphically how efficiency and power gain change as a function of the load termination. Experimental results obtained with a 1-W bipolar junction transistor (BJT) amplifier at 1.3 GHz are presented.
Keywords
Circuit noise; Gallium arsenide; MESFETs; Microwave FETs; Microwave amplifiers; Microwave theory and techniques; Microwave transistors; National electric code; Power amplifiers; Radiofrequency identification;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1129010
Filename
1129010
Link To Document