Title :
Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
Author :
Xinjun Liu ; Sadaf, S.M. ; Sangsu Park ; Seonghyun Kim ; Euijun Cha ; Daeseok Lee ; Gun-Young Jung ; Hyunsang Hwang
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O5-∞/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WO∞ layer between the W TE and the Nb2O5-∞ oxide film. The niobium oxide-based CRS devices within a single memory cell can be directly integrated into a crossbar memory array without the need of extra diodes; this can significantly reduce the fabrication complexity.
Keywords :
electrodes; niobium compounds; random-access storage; switching circuits; tungsten compounds; CRS devices; CRS effect behavior; Nb2O5; RRAM; WO; complementary resistive switching; crossbar memory array; fabrication complexity; niobium oxide-based resistive memory devices; oxygen barrier layer; resistive random access memory; self-formed layer; single memory cell; top electrode; Arrays; Electrodes; Materials; Niobium; Sputtering; Switches; Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2235816
