Title :
Schottky contact effects in the sidegating effect of GaAs devices
Author :
Liu, Yi ; Dutton, Robert W. ; Deal, Michael D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
The sidegating effect measurements on ungated FETs verify that the Schottky contact on undoped substrates causes serious current reduction in GaAs devices and high leakage current in the semi-insulating GaAs. By realizing the fact that current in Schottky-i-n structures can be high and taking this effect into account, the observed abrupt changes and S-shaped characteristics of the drain and sidegate currents can be explained to be the consequence of the transition of the substrate current from the n-i-n current to the Schottky-i-n current.<>
Keywords :
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; leakage currents; semiconductor device testing; GaAs devices; MESFET; S-shaped characteristics; Schottky contact effects; Schottky-i-n current; current reduction; drain current; high leakage current; n-i-n current; sidegate currents; sidegating effect; substrate current; undoped substrates; ungated FETs; Current measurement; FETs; Gallium arsenide; Gold; Leakage current; MESFETs; Schottky barriers; Substrates; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
