Title :
Dual-gate gallium-arsenide microwave field-effect transistor
Author :
Turner, J.A. ; Waller, A.J. ; Kelly, E. ; Parker, Dennis
Author_Institution :
Plessey Co., Allen Clarke Research Centre, Towcester, UK
Abstract :
Dual-gate gallium-arsenide field-effect transistors have been fabricated which give power gains greater than those which can be obtained from single-gate devices of similar gate length. Unconditionally stable gains in excess of 12 dB at 5 GHz have been measured for these devices.
Keywords :
field effect transistors; microwave devices; semiconductor materials; GaAs; dual gate FET; microwave devices; semiconductors; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710451
