Title :
Process Modeling for Photoresist Development and Design of DLR/sd (Double-Layer Resist by a Single Development) Process
Author :
Hirai, Yoshihiko ; Sasago, Masaru ; Endo, Masayuki ; Tsuji, Kazuhiko ; Mano, Yojirou
Author_Institution :
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Osaka, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
This paper describes a new simple process model for photoresist development. The model includes the consideration of chemical reactions between a photoresist and a developer, and takes the developer concentration dependence into account. The model is applied to the design of practical photo-lithography processes to determine development conditions. Through the introduction of the model-based lithographic simulations, the multilayer resist process has been successfully designed and has obtained satisfactory patterns.
Keywords :
Chemical analysis; Chemical processes; Circuit simulation; Computer simulation; Inhibitors; Nonhomogeneous media; Predictive models; Process design; Resists; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1987.1270285