Title :
Noise measure of metal-semiconductor--metal Schottky-barrier microwave diodes
Author :
Haus, H.A. ; Statz, H. ; Pucel, R.A.
Author_Institution :
Massachusetts Institute of Technology, Electrical Engineering Department and Research Laboratory of Electronics, Cambridge, USA
Abstract :
We calculate the impedance and noise measure of metal--semiconductor--metal (m.s.m.) microwave diodes. Assuming that the noise is caused by space-charge-smoothed shot noise accompanying the d.c. bias current, one comes to the conclusion that noise measures less than unity are possible. If shot noise is the main contributing noise source, then m.s.m. diodes should become extremely low-noise microwave oscillators and amplifiers.
Keywords :
Schottky-barrier diodes; microwave devices; noise; Schottky barrier diodes; metal-semiconductor-metal structure; microwave devices; noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710456
