A Two-Dimensional Integrated Process Simulator: SPIRIT-I

Author

Ohgo, Masanori ; Takano, Yasuko ; Moniwa, Akemi ; Yamamoto, Shuichi ; Sakai, Yoshio ; Masuda, Hiroo ; Sunami, Hideo

Author_Institution

Central Research Laboratory, Hitachi Ltd., Tokyo, Japan

Volume

6

Issue

3

fYear

1987

fDate

5/1/1987 12:00:00 AM

Firstpage

439

Lastpage

445

Abstract

A new two-dimensional integrated process simulation system named SPIRIT-I (Simulation Processor for Integrated Representation of Impurity-profile and Topography-I) has been developed. This system includes elementary process simulators of deposition, lithography, etching, ion implantation, diffusion, and oxidation. SPIRIT features a closely coupled simulation between a topography simulator and impurity-profile simulators at each processing step. As an example of simulation, an LDD (Lightly-Doped Drain) MOSFET with tilted source and drain implantation has been derived. In addition, this process simulation system is closely connected with a 3D device simulator. Using this coupled simulation system, the critical effect of processing conditions on device characteristics is analyzed.

Keywords

Analytical models; Computational modeling; Computer simulation; Etching; Fabrication; Lithography; MOSFET circuits; Oxidation; Surfaces; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.1987.1270290

Filename

1270290