Title :
New method to determine the base resistance of bipolar transistors
Author :
Weng, J. ; Holz, J. ; Meister, T.F.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
3/1/1992 12:00:00 AM
Abstract :
A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet resistance for the internal base region can be estimated for a base-emitter voltage range of practical interest. An accurate estimation of the base resistance of advanced bipolar transistors under high-forward-bias conditions is demonstrated.<>
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device testing; base resistance; base-emitter voltage range; bipolar transistors; external base resistance; forward-bias conditions; internal base resistances; sheet resistance; Bipolar transistor circuits; Bipolar transistors; Contact resistance; Current measurement; Design optimization; Economic indicators; Electrical resistance measurement; Noise measurement; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
