• DocumentCode
    915080
  • Title

    Nonohmic contacts for microwave devices

  • Author

    Irvin, J.C. ; Pritchett, R.L.

  • Volume
    58
  • Issue
    11
  • fYear
    1970
  • Firstpage
    1845
  • Lastpage
    1846
  • Abstract
    Theoretical and experimental results are presented which demonstrate that the microwave properties of a nonohmic contact can be superior to those of an ohmic contact. Reactive (Schottky-barrier) contacts have been employed successfully on GaAs IMPATT diodes, where 2.0 watts, CW, have been obtained at 4.5 GHz with 10 percent efficiency.
  • Keywords
    Anodes; Boundary conditions; Cathodes; Current density; Electron devices; Geometry; Gold; Microwave devices; Poisson equations; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.8030
  • Filename
    1449960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915080