DocumentCode :
915090
Title :
Inverse-Geometry Dependence of MOS Transistor Electrical Parameters
Author :
Hsu, Ming C. ; Sheu, Bing J.
Author_Institution :
Department of Electrical Engineering and Information Sciences Institute, University of Southern California, Los Angeles, CA, USA
Volume :
6
Issue :
4
fYear :
1987
fDate :
7/1/1987 12:00:00 AM
Firstpage :
582
Lastpage :
585
Abstract :
Precise determination of transistor electrical parameters is essential for accurate circuit simulation. The strong geometric dependences of MOS transistor electrical parameters can be modeled by the inverse-geometry formula. However, special care is needed in using the inverse-geometry formula. To prevent the short-channel and narrow-width effects being adversely mirrored to the drain-current evaluation of large transistors, we propose to clamp the dependences of transistor electrical parameters on small-geometry effects at a boundary (L CLP, W CLP). In principle three transistors with two different channel lengths and two different channel widths are required to extract the geometric dependence of various electric parameters. Our analysis shows that a set of five test transistors can increase the extraction accuracy by a factor of two, and thus is a better choice when both the modeling accuracy and test clip complexity are considered.
Keywords :
Circuit simulation; Circuit testing; Clamps; Large scale integration; MOSFETs; Parameter extraction; Production; Solid modeling; Threshold voltage; Very large scale integration;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.1987.1270305
Filename :
1270305
Link To Document :
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